FQD2N100TM
Manufacturer:
On Semiconductor
Mfr.Part #:
FQD2N100TM
Datasheet:
Description:
MOSFETs DPAK-3 SMD/SMT N-Channel number of channels:1 2.5 W 1 kV Continuous Drain Current (ID):1.6 A 15.5 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 900 V |
| Length | 6.6 mm |
| Width | 6.1 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 9 Ω |
| Height | 2.3 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 1.6 A |
| Max Power Dissipation | 2.5 W |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 5 V |
| Number of Channels | 1 |
| Input capacitance | 520 pF |
| Continuous Drain Current (ID) | 1.6 A |
| Rds On Max | 9 Ω |
| Drain to Source Voltage (Vdss) | 1 kV |
| Turn-On Delay Time | 13 ns |
| Turn-Off Delay Time | 25 ns |
| Element Configuration | Single |
| Fall Time | 35 ns |
| Rise Time | 30 ns |
| Gate Charge | 15.5 nC |
| Drain to Source Resistance | 7.1 Ω |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 5 V |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 1 kV |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 3 V |
| FET Type(Transistor Polarity) | N-Channel |
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